IRFH5210TRPBF
Codsiyada
1.Saxitaanka Isku-dhafka Labaad ee Side
2.Inverters for DC Motors
3.DC-DC Codsiyada lebenka
4.Kor u rogayaasha
Astaamaha
1.Low RDSon (≤ 14.9mΩ at Vgs = 10V)
2. U adkaysiga kulaylka hooseeya ee PCB (≤ 1.2°C/W)
3.100% Rg waa la tijaabiyay
4. Profile hoose (≤ 0.9 mm)
5.Industry-Standard Pinout
6.La jaanqaadi kara Farsamooyinka Buuraha Dusha ee jira
7.RoHS Compliant Aan ku jirin rasaas, Bromide iyo Halogen midna
8.MSL1, Aqoonta Warshadaha
Faa'iidooyinka
1.Khasaarooyinka Habdhaqanka Hoose
2.Waxay sahlaysa kala dirida kulaylka wanaagsan
3.Kordhinta Kalsoonida
4.Cafnaanta Awoodda oo Kordhay
5.Isku waafaqid Multi-Vendor
6.Waxsoosaarka fudud
7.Deegaanka u saaxiibka ah
8.Kordhinta Kalsoonida
Soo saaraha Qaybta Nambarka:IRFH9310TRPBF
Soo saaraha / Brand International Rectifier (Infineon Technologies)
Qayb ka mid ah Sharaxaada:MOSFET P-CH 30V 21A PQFN
Heerka Leedhka Xorta ah / Xaaladda RoHS: Leedhka bilaashka ah / RoHS waafaqsan
Xaaladda Kaydka: Asalka cusub, 12000 pcs kayd ayaa la heli karaa.
Markab Ka Yimid:Hong Kong
Habka Rarida:DHL/Fedex/TNT/UPS
Sifada Alaabta Sifada Qiimaha Xulashada Sifo
Qaybta Nambarka IRFH9310TRPBF
Soo-saare / Summada Caalamiga ah Rectifier (Infineon Technologies)
Tirada saamiyada 12000 pcs Stock
Qaybta Alaabta Semiconductor Discrete Discrete> Transistor - FETs, MOSFETs - Single
Sharaxaada MOSFET P-CH 30V 21A PQFN
Heerka Leedhka Xorta ah / Xaaladda RoHS: Leedhka bilaashka ah / RoHS waafaqsan
Ballaca - Gudaha -55°C ~ 150°C (TJ)
Voltage/Hadda - Soo saarida 1 PQFN (5x6)
Dulqaadka 5250pF @ 15V
Dabada Nooca P-Channel
Xagasha Tallaabada MOSFET (Metal Oxide)
Tiknoolajiyada Infineon Heerkulka Hoosi
Nooca SFP/XFP ± 20V
Kartida Fog ee HEXFET®
Dusha sare - Cable dusha Buurta
Magacyo Kale Waxay Hogamiyaan Bilaash / RoHS Complient
Magacyo Kale 1
Oscillator Nooca 8-PowerVDFN
Tirada DAC's 30V
Cufis-jiidad Gaarka ah ee ugu yar -
Hanuuninta lammaane 4.6 mohm @ 21A, 10V
Soo saaraha Qaybta Lambarka IRFH9310TRPBFDKR-ND
Dhererka - Foosto Digi-Reel®
Midabka nalka 4.5V, 10V
Voltage dhinaca Sare - ugu badnaan (Bootstrap) 21A (Ta), 40A (Tc)
Shaqada 58nC @ 4.5V
Awood Gariiradda Firfircoon
Awoodda Kanaalka (CS(off), CD(off)) 3.1W (Ta)
Nooca Akhriyaha Kaadhka 2.4V @ 100µA
Tilmaamaha iyo Faa'iidooyinka
Tilmaamaha Natiijooyinka Faa'iidooyinka
RDSon Hoose (≤ 4.6mΩ) Khasaaraha Dhaqanka Hoose
Xirmada-Heerka ah ee PQFN Xirmada Iibka Badan
U hoggaansanaanta RoHS oo aan ka koobnayn rasaas, aan lahayn Bromide iyo aan lahayn Halogen deegaan ahaan saaxiib
natiijooyinka
Ogow
Tirada Foomka
IRFH9310TRPBF PQFN 5mm x 6mm Cajalad iyo Reel 4000
Tirada qaybta la dalban karo Xidhmada Nooca Heerka Xidhmada
VDS -30 V
RDS(on) ugu badnaan
(@VGS = 10V) 4.6 mΩ
Qg (caadi ah) 110 nC
RG (caadi ah) 2.8 Ω
ID
(@TA = 25°C) -21 A
Qiimaynta ugu Sarreysa
Unugyada Parameter
Voltage-ka-soo-baxa VDS
VGS Gate-to-source Voltage
Aqoonsiga @ TA = 25°C Dheecaan joogto ah oo socda, VGS @ -10V
Aqoonsiga @ TA = 70°C Dheecaan joogto ah oo socda, VGS @ -10V
Aqoonsiga @ TC = 25°C Dheecaan joogto ah oo socda, VGS @ -10V (Silicon Limited)
Aqoonsiga @ TC = 70°C Dheecaan joogto ah oo socda, VGS @ -10V (Silicon Limited)
Aqoonsiga @ TC = 25°C Dheecaan joogto ah oo socda, VGS @ -10V ( Xidhmada Xaddidan)
IDM Jiifka Daaditaanka Hadda
PD @TA = 25°C Korontada Darida
PD @ TA = 70°C Korontada Kala Diridda
Qodobka leexinta tooska ah W/°C
Isgoysyada Hawlgalka ee TJ iyo
Heerkulka Heerkulka ee TSTG
Qiimaynta soo noqnoqda;ballaca garaaca wadnaha ku xaddidan max.heerkulka isgoysyada.
Laga bilaabo TJ = 25 ° C, L = 1.1mH, RG = 50Ω, IAS = -17A.
Ballaca garaaca ≤ 400µs;wareegga shaqada ≤ 2%.
Marka lagu rakibo looxa naxaasta oo laba jibaaran 1 inch
Rθ waxaa lagu cabbiraa TJ qiyaastii 90°C.
Loogu talagalay GARGAARKA NAQAALAHA OO KALIYA, oo aan ku xidhnayn tijaabada wax soo saarka.